光(guang)伏發電(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)主要原理是半導(dao)(dao)體(ti)(ti)的(de)(de)(de)光(guang)電(dian)(dian)(dian)(dian)(dian)(dian)效應。光(guang)子(zi)(zi)(zi)照射到金(jin)屬(shu)(shu)上時，它(ta)的(de)(de)(de)能(neng)量可以(yi)被金(jin)屬(shu)(shu)中(zhong)某(mou)個(ge)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)全部吸(xi)收(shou)，電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)吸(xi)收(shou)的(de)(de)(de)能(neng)量足夠大，能(neng)克服金(jin)屬(shu)(shu)內(nei)部引(yin)力做功(gong)，離(li)開金(jin)屬(shu)(shu)表面逃(tao)逸出來(lai)，成(cheng)為光(guang)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)。硅(gui)原子(zi)(zi)(zi)有(you)(you)4個(ge)外層(ceng)(ceng)(ceng)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)，如(ru)果在純(chun)硅(gui)中(zhong)摻入(ru)有(you)(you)5個(ge)外層(ceng)(ceng)(ceng)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)的(de)(de)(de)原子(zi)(zi)(zi)如(ru)磷原子(zi)(zi)(zi)，就成(cheng)為N型(xing)半導(dao)(dao)體(ti)(ti)；若在純(chun)硅(gui)中(zhong)摻入(ru)有(you)(you)3個(ge)外層(ceng)(ceng)(ceng)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)的(de)(de)(de)原子(zi)(zi)(zi)如(ru)硼(peng)原子(zi)(zi)(zi)，形(xing)成(cheng)P型(xing)半導(dao)(dao)體(ti)(ti)。當P型(xing)和N型(xing)結合在一起時，接觸面就會形(xing)成(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)勢差，成(cheng)為太陽能(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池。當太陽光(guang)照射到P－N結后，空穴由P極區(qu)往N極區(qu)移(yi)動，電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)由N極區(qu)向(xiang)P極區(qu)移(yi)動，形(xing)成(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)流。

光(guang)(guang)(guang)電效應就是(shi)光(guang)(guang)(guang)照使(shi)不均勻半(ban)導體或半(ban)導體與金屬(shu)結合的不同部位之(zhi)間產生電位差的現象。它首先是(shi)由光(guang)(guang)(guang)子(光(guang)(guang)(guang)波(bo))轉(zhuan)化為電子、光(guang)(guang)(guang)能(neng)量轉(zhuan)化為電能(neng)量的過程；其(qi)次，是(shi)形成電壓過程。

多晶硅(gui)經(jing)過鑄錠(ding)、破(po)錠(ding)、切(qie)片(pian)等程序后，制(zhi)作成(cheng)(cheng)(cheng)待(dai)加工的硅(gui)片(pian)。在(zai)硅(gui)片(pian)上摻雜和擴散(san)微量(liang)的硼、磷等，就形成(cheng)(cheng)(cheng)P－N結。然后采(cai)用(yong)絲網(wang)印刷，將(jiang)精配好的銀漿印在(zai)硅(gui)片(pian)上做成(cheng)(cheng)(cheng)柵線，經(jing)過燒(shao)結，同(tong)時制(zhi)成(cheng)(cheng)(cheng)背電(dian)(dian)(dian)(dian)(dian)(dian)極，并在(zai)有柵線的面(mian)涂一(yi)層防反(fan)射涂層，電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)片(pian)就至此制(zhi)成(cheng)(cheng)(cheng)。電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)片(pian)排列組(zu)(zu)合成(cheng)(cheng)(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)件(jian)(jian)，就組(zu)(zu)成(cheng)(cheng)(cheng)了(le)大的電(dian)(dian)(dian)(dian)(dian)(dian)路板(ban)。一(yi)般在(zai)組(zu)(zu)件(jian)(jian)四(si)周包鋁框，正面(mian)覆蓋玻璃(li)，反(fan)面(mian)安裝(zhuang)電(dian)(dian)(dian)(dian)(dian)(dian)極。有了(le)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)件(jian)(jian)和其他輔助(zhu)設備，就可(ke)以組(zu)(zu)成(cheng)(cheng)(cheng)發電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)。為了(le)將(jiang)直流(liu)電(dian)(dian)(dian)(dian)(dian)(dian)轉(zhuan)化交流(liu)電(dian)(dian)(dian)(dian)(dian)(dian)，需要安裝(zhuang)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)轉(zhuan)換(huan)器。發電(dian)(dian)(dian)(dian)(dian)(dian)后可(ke)用(yong)蓄電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)存儲，也可(ke)輸入公共電(dian)(dian)(dian)(dian)(dian)(dian)網(wang)。發電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)成(cheng)(cheng)(cheng)本(ben)中，電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)件(jian)(jian)約(yue)占(zhan)50%，電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)轉(zhuan)換(huan)器、安裝(zhuang)費(fei)(fei)、其他輔助(zhu)部件(jian)(jian)以及其他費(fei)(fei)用(yong)占(zhan)另外50%。 

光伏發電原理

光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)發電(dian)是根據光(guang)(guang)(guang)(guang)生伏(fu)(fu)(fu)原理,利(li)用(yong)太(tai)陽能(neng)電(dian)池將太(tai)陽光(guang)(guang)(guang)(guang)能(neng)直接轉化為(wei)電(dian)能(neng)。不(bu)論是獨(du)立(li)使用(yong)還是并網發電(dian),光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)發電(dian)系統主(zhu)要(yao)(yao)(yao)由(you)太(tai)陽能(neng)電(dian)池板（組件(jian)）、控制器和(he)逆變(bian)器三大部(bu)分組成，它們主(zhu)要(yao)(yao)(yao)由(you)電(dian)子(zi)元器件(jian)構成，不(bu)涉及機械部(bu)件(jian),所以(yi),光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)發電(dian)設備極為(wei)精煉(lian),可(ke)靠(kao)穩定壽(shou)命長、安裝維護簡便。理論上講(jiang),光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)發電(dian)技術可(ke)以(yi)用(yong)于任(ren)何需(xu)要(yao)(yao)(yao)電(dian)源的場合,上至(zhi)(zhi)航天器,下(xia)至(zhi)(zhi)家用(yong)電(dian)源,大到兆瓦(wa)級電(dian)站,小到玩具,光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)電(dian)源無處(chu)不(bu)在(zai)(zai)。國產(chan)晶(jing)體硅電(dian)池效率在(zai)(zai)10至(zhi)(zhi)13%左右，國外同類產(chan)品(pin)效率約12至(zhi)(zhi)14%。由(you)一個或多(duo)個太(tai)陽能(neng)電(dian)池片(pian)組成的太(tai)陽能(neng)電(dian)池板稱為(wei)光(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)組件(jian)。 

典(dian)型(xing)系統圖如下：